Part Details for SKB15N60 by Infineon Technologies AG
Overview of SKB15N60 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for SKB15N60
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2544 |
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ComSIT USA | FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON DIODE Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | Europe - 420 |
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Part Details for SKB15N60
SKB15N60 CAD Models
SKB15N60 Part Data Attributes:
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SKB15N60
Infineon Technologies AG
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Datasheet
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Compare Parts:
SKB15N60
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 31 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 65 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 28 ns | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 315 ns | |
| Turn-on Time-Nom (ton) | 54 ns |
Alternate Parts for SKB15N60
This table gives cross-reference parts and alternative options found for SKB15N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKB15N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | SKB15N60 vs GT15H101 |
| IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | SKB15N60 vs IRGBC30FD2 |
| IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | SKB15N60 vs IRGPC50U |
| HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | SKB15N60 vs HGTD7N60C3S9A |
| IRG4BC20W-STRLPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | SKB15N60 vs IRG4BC20W-STRLPBF |
| IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | SKB15N60 vs IXGH36N60A3D4 |
| IRG4PH50UD | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | SKB15N60 vs IRG4PH50UD |
| HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | SKB15N60 vs HGTG10N120BND |
| HGTP12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | SKB15N60 vs HGTP12N60C3DR |
| IXGH12N60BD1 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | SKB15N60 vs IXGH12N60BD1 |