Datasheets
SKB10N60A by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3

Part Details for SKB10N60A by Infineon Technologies AG

Overview of SKB10N60A by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for SKB10N60A

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SKB10N60A Part Data Attributes:

SKB10N60A Infineon Technologies AG
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SKB10N60A Infineon Technologies AG Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 32 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 92 W
Qualification Status Not Qualified
Rise Time-Max (tr) 15 ns
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 224 ns
Turn-on Time-Nom (ton) 40 ns

Alternate Parts for SKB10N60A

This table gives cross-reference parts and alternative options found for SKB10N60A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKB10N60A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation SKB10N60A vs HGT1S3N60B3S
APT45GL100BN 45A, 1000V, N-CHANNEL IGBT, TO-247 Microsemi Corporation SKB10N60A vs APT45GL100BN
IRG4BC20W-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG SKB10N60A vs IRG4BC20W-S
HGTP20N60C3R Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel Fairchild Semiconductor Corporation SKB10N60A vs HGTP20N60C3R
IRGPC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC International Rectifier SKB10N60A vs IRGPC50U
IRG4BC20FD-STRR Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier SKB10N60A vs IRG4BC20FD-STRR
HGTD7N60C3S9A 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL onsemi SKB10N60A vs HGTD7N60C3S9A
HGTP12N60C3 Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, Fairchild Semiconductor Corporation SKB10N60A vs HGTP12N60C3
IRG4BC40K Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG SKB10N60A vs IRG4BC40K
1MB10-120 Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Fuji Electric Co Ltd SKB10N60A vs 1MB10-120

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