Datasheets
SIPC61N60S5 by: Infineon Technologies AG

Power Field-Effect Transistor, 47A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-1

Part Details for SIPC61N60S5 by Infineon Technologies AG

Overview of SIPC61N60S5 by Infineon Technologies AG

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Applications Education and Research Industrial Automation Computing and Data Storage Electronic Manufacturing

Part Details for SIPC61N60S5

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SIPC61N60S5 Part Data Attributes:

SIPC61N60S5 Infineon Technologies AG
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SIPC61N60S5 Infineon Technologies AG Power Field-Effect Transistor, 47A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-1
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N1
Pin Count 1
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 47 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUUC-N1
Number of Elements 1
Number of Terminals 1
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 94 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Element Material SILICON

Alternate Parts for SIPC61N60S5

This table gives cross-reference parts and alternative options found for SIPC61N60S5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIPC61N60S5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIPC69N60C2 Power Field-Effect Transistor, 47A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE Infineon Technologies AG SIPC61N60S5 vs SIPC69N60C2
STW47NM60 47A, 600V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics SIPC61N60S5 vs STW47NM60
FCH47N60F-F085 N-Channel MOSFET 600V, 47A, 75mΩ, TO-247 3L, 450-TUBE, Automotive Qualified onsemi SIPC61N60S5 vs FCH47N60F-F085
FCH47N60F Power Field-Effect Transistor, 47A I(D), 600V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Fairchild Semiconductor Corporation SIPC61N60S5 vs FCH47N60F
FCH47N60F_F085 600V, 47A, 66mΩ, TO-247 N-Channel SuperFET™, TO-247 3L, 3600-RAIL onsemi SIPC61N60S5 vs FCH47N60F_F085
R6046FNZ1C9 Power Field-Effect Transistor, 46A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SIPC61N60S5 vs R6046FNZ1C9
SIPC69N60C3 Power Field-Effect Transistor, 47A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE Infineon Technologies AG SIPC61N60S5 vs SIPC69N60C3

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