Part Details for SIHF5N50D-E3 by Vishay Siliconix
Overview of SIHF5N50D-E3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHF5N50D-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHF5N50D-E3-ND
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DigiKey | MOSFET N-CH 500V 5.3A TO220 Min Qty: 1000 Lead time: 14 Weeks Container: Tube | Limited Supply - Call |
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$0.5473 | Buy Now |
Part Details for SIHF5N50D-E3
SIHF5N50D-E3 CAD Models
SIHF5N50D-E3 Part Data Attributes
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SIHF5N50D-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHF5N50D-E3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
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Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 23 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 5.3 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHF5N50D-E3
This table gives cross-reference parts and alternative options found for SIHF5N50D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF5N50D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PJF5NA50_T0_00001 | Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220AB-F, 3 PIN | PanJit Semiconductor | SIHF5N50D-E3 vs PJF5NA50_T0_00001 |
STP5NC50FP | 5.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STMicroelectronics | SIHF5N50D-E3 vs STP5NC50FP |
SIHF5N50D-E3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | SIHF5N50D-E3 vs SIHF5N50D-E3 |
ZDX050N50 | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF5N50D-E3 vs ZDX050N50 |
IRF830I-HF | TRANSISTOR 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | SIHF5N50D-E3 vs IRF830I-HF |
5N50G-TF3-T | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | SIHF5N50D-E3 vs 5N50G-TF3-T |
KF5N53FS | Power Field-Effect Transistor, 5A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS, 3 PIN | KEC | SIHF5N50D-E3 vs KF5N53FS |
KF5N53F | Power Field-Effect Transistor, 5A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN | KEC | SIHF5N50D-E3 vs KF5N53F |
R5005CNX | Power Field-Effect Transistor, 5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF5N50D-E3 vs R5005CNX |
OM6004STPBF | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN | Infineon Technologies AG | SIHF5N50D-E3 vs OM6004STPBF |