Part Details for ZDX050N50 by ROHM Semiconductor
Overview of ZDX050N50 by ROHM Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for ZDX050N50
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
ZDX050N50-ND
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DigiKey | MOSFET N-CH 500V 5A TO220FM Min Qty: 1 Lead time: 23 Weeks Container: Bulk |
177 In Stock |
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$0.7195 / $1.6900 | Buy Now |
Part Details for ZDX050N50
ZDX050N50 CAD Models
ZDX050N50 Part Data Attributes
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ZDX050N50
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
ZDX050N50
ROHM Semiconductor
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for ZDX050N50
This table gives cross-reference parts and alternative options found for ZDX050N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZDX050N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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UF830ZG-TF3-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | ZDX050N50 vs UF830ZG-TF3-T |
IRFY430CMPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | ZDX050N50 vs IRFY430CMPBF |
FDPF5N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | ZDX050N50 vs FDPF5N50 |
UF830G-TF3-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | ZDX050N50 vs UF830G-TF3-T |
2SK2022-01M | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F15, 3 PIN | ZDX050N50 vs 2SK2022-01M |
R5005CNX | ROHM Semiconductor | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN | ZDX050N50 vs R5005CNX |
TSM5NC50CFC0G | Taiwan Semiconductor | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220S, 3 PIN | ZDX050N50 vs TSM5NC50CFC0G |
UF830ZL-TF3-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | ZDX050N50 vs UF830ZL-TF3-T |
IRF830I-HF | Advanced Power Electronics Corp | Check for Price | TRANSISTOR 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power | ZDX050N50 vs IRF830I-HF |
KF5N50FZA | KEC | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN | ZDX050N50 vs KF5N50FZA |