Part Details for SIHB15N60E-GE3 by Vishay Siliconix
Overview of SIHB15N60E-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for SIHB15N60E-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHB15N60E-GE3-ND
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DigiKey | MOSFET N-CH 600V 15A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Bulk |
1347 In Stock |
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$1.4000 / $3.0000 | Buy Now |
Part Details for SIHB15N60E-GE3
SIHB15N60E-GE3 CAD Models
SIHB15N60E-GE3 Part Data Attributes:
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SIHB15N60E-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHB15N60E-GE3
Vishay Siliconix
MOSFET N CH 600V 15A DPAK
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Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 102 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.28 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 180 W | |
Pulsed Drain Current-Max (IDM) | 39 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHB15N60E-GE3
This table gives cross-reference parts and alternative options found for SIHB15N60E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB15N60E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPP15N60C3XK | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHB15N60E-GE3 vs SPP15N60C3XK |
SPI15N65C3 | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | SIHB15N60E-GE3 vs SPI15N65C3 |
STI19NM65N | 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | SIHB15N60E-GE3 vs STI19NM65N |
STB19NM65NT4 | 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | STMicroelectronics | SIHB15N60E-GE3 vs STB19NM65NT4 |
SIHP15N65E-GE3 | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB15N60E-GE3 vs SIHP15N65E-GE3 |
STW15NM65N | 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | SIHB15N60E-GE3 vs STW15NM65N |
SPA15N65C3 | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Infineon Technologies AG | SIHB15N60E-GE3 vs SPA15N65C3 |
SIHB15N60E-GE3 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Intertechnologies | SIHB15N60E-GE3 vs SIHB15N60E-GE3 |
STP19NM65N | 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STMicroelectronics | SIHB15N60E-GE3 vs STP19NM65N |
SPP15N60C3XKSA1 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHB15N60E-GE3 vs SPP15N60C3XKSA1 |