Part Details for STW15NM65N by STMicroelectronics
Overview of STW15NM65N by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Energy and Power Systems
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
Part Details for STW15NM65N
STW15NM65N CAD Models
STW15NM65N Part Data Attributes
|
|
STW15NM65N
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STW15NM65N
STMicroelectronics
15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 15.5 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3/e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 62 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN/TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STW15NM65N
This table gives cross-reference parts and alternative options found for STW15NM65N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW15NM65N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STI19NM65N | STMicroelectronics | Check for Price | 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STW15NM65N vs STI19NM65N |
| SIHP15N65E-GE3 | Vishay Intertechnologies | $2.4164 | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | STW15NM65N vs SIHP15N65E-GE3 |
| STP19NM65N | STMicroelectronics | Check for Price | 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STW15NM65N vs STP19NM65N |
| STI15NM65N | STMicroelectronics | Check for Price | 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STW15NM65N vs STI15NM65N |
| SPA15N65C3XKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STW15NM65N vs SPA15N65C3XKSA1 |
| SPW15N60C3FKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN | STW15NM65N vs SPW15N60C3FKSA1 |
| SPI15N65C3XKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN | STW15NM65N vs SPI15N65C3XKSA1 |
| FCA16N60_F109 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | STW15NM65N vs FCA16N60_F109 |
| SPA15N65C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STW15NM65N vs SPA15N65C3 |