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Part Details for SI7923DN-T1-GE3 by Vishay Intertechnologies
Overview of SI7923DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI7923DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
07AH4771
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Newark | Mosfet, Dual P-Ch, -30V, Powerpak 1212, Transistor Polarity:Dual P Channel, Continuous Drain Current Id:-6.4A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.075Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Rohs Compliant: Yes |Vishay SI7923DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2402 |
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$1.0300 / $1.2000 | Buy Now |
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DISTI #
33P5450
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Newark | Dual P Channel Mosfet, -30V, 6.4A, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:6.4A, No. Of Pins:8Pins, Qualification:- Rohs Compliant: Yes |Vishay SI7923DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6530 / $0.7810 | Buy Now |
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DISTI #
SI7923DN-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7923DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.6260 | Buy Now |
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Future Electronics | Dual P-Ch 30 V 47 mOhm Surface Mount TrenchFET® Power Mosfet - PowerPAK® 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.6150 / $0.6350 | Buy Now |
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DISTI #
SI7923DN-T1-GE3
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TTI | MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.6180 / $0.6310 | Buy Now |
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DISTI #
SI7923DN-T1-GE3
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EBV Elektronik | Transistor MOSFET Array Dual P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R (Alt: SI7923DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 30V 4.3A 47m6.4A10V 1.3W 3V250uA 2 P-Channel MOSFETs ROHS | 97 |
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$0.8638 / $1.3915 | Buy Now |
Part Details for SI7923DN-T1-GE3
SI7923DN-T1-GE3 CAD Models
SI7923DN-T1-GE3 Part Data Attributes
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SI7923DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7923DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.8 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |