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Transistors / Power Field-Effect Transistors / SI7923DN-T1-GE3
Datasheets
SI7923DN-T1-GE3 by:
Vishay Intertechnologies
Vishay Huntington
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

Part Details for SI7923DN-T1-GE3 by Vishay Intertechnologies

Results Overview of SI7923DN-T1-GE3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

SI7923DN-T1-GE3 Information

SI7923DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI7923DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 07AH4771
Newark Mosfet, Dual P-Ch, -30V, Powerpak 1212, Transistor Polarity:Dual P Channel, Continuous Drain Curre... nt Id:-6.4A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.075Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Rohs Compliant: Yes |Vishay SI7923DN-T1-GE3 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3000
  • 1 $1.8100
  • 10 $1.4800
  • 25 $1.3900
  • 50 $1.2900
  • 100 $1.2000
  • 250 $1.2000
$1.2000 / $1.8100 Buy Now
DISTI # 26R1943
Newark Dual P Channel Mosfet, -30V, -6.4A, Channel Type:P Channel, Drain Source Voltage Vds N Channel:30V... , Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:6.4A, Continuous Drain Current Id P Channel:6.4A Rohs Compliant: Yes |Vishay SI7923DN-T1-GE3 more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 250 $0.9560
$0.9560 Buy Now
DISTI # 33P5450
Newark Dual P Channel Mosfet, -30V, 6.4A, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds N C... hannel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:6.4A, No. Of Pins:8Pins, Qualification:- Rohs Compliant: Yes |Vishay SI7923DN-T1-GE3 more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.7810
  • 4,000 $0.7040
  • 6,000 $0.6790
  • 10,000 $0.6530
$0.6530 / $0.7810 Buy Now
DISTI # 781-SI7923DN-GE3
Mouser Electronics MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant 5093
  • 1 $2.2000
  • 10 $1.4400
  • 100 $0.9870
  • 250 $0.9620
  • 500 $0.7920
  • 1,000 $0.7260
  • 3,000 $0.6370
$0.6370 / $2.2000 Buy Now
Future Electronics Dual P-Ch 30 V 47 mOhm Surface Mount TrenchFET® Power Mosfet - PowerPAK® 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.5050
  • 6,000 $0.4950
$0.4950 / $0.5050 Buy Now
DISTI # SI7923DN-T1-GE3
TTI MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 6000
In Stock
  • 3,000 $0.6310
  • 9,000 $0.6180
$0.6180 / $0.6310 Buy Now
DISTI # SI7923DN-T1-GE3
EBV Elektronik Transistor MOSFET Array Dual PCH 30V 43A 8Pin PowerPAK 1212 TR (Alt: SI7923DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 6.4A 0.04710V6.4A 1.5W 2 P-Channel MOSFETs ROHS 97
  • 1 $1.1503
  • 10 $0.9618
  • 30 $0.8585
  • 100 $0.7409
  • 500 $0.6893
  • 1,000 $0.6652
$0.6652 / $1.1503 Buy Now

Part Details for SI7923DN-T1-GE3

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SI7923DN-T1-GE3 Part Data Attributes

Parametric Data
SI7923DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7923DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.8 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI7923DN-T1-GE3 Related Parts

SI7923DN-T1-GE3 Frequently Asked Questions (FAQ)

  • A good PCB layout for the SI7923DN-T1-GE3 should include a solid ground plane, wide power traces, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.

  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the datasheet's thermal derating curve.

  • The SI7923DN-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap, mat, or workstation, and follow standard ESD handling procedures to prevent damage.

  • Yes, the SI7923DN-T1-GE3 is suitable for high-frequency switching applications. However, ensure that the device is properly bypassed, and the PCB layout is optimized for high-frequency operation. Additionally, consider the device's switching characteristics, such as rise and fall times, to ensure reliable operation.

  • Follow the recommended soldering and rework conditions outlined in the datasheet, including peak temperatures, soldering times, and rework techniques. Ensure that the device is not exposed to excessive temperatures or mechanical stress during the soldering process.