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Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7850DP-T1-E3CT-ND
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DigiKey | MOSFET N-CH 60V 6.2A PPAK SO-8 Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9869 In Stock |
|
$0.8069 / $1.9200 | Buy Now |
DISTI #
70026127
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RS | MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.018Ohm, ID 6.2A, PowerPAK SO-8,PD 1.8W,-55C | Siliconix / Vishay SI7850DP-T1-E3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 2663 |
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$1.4800 / $1.7400 | Buy Now |
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ES Components | SIL SI7850DP-T1-E3 60V MOSFET 3K/RL | 0 in Stock |
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RFQ | |
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New Advantage Corporation | Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 138000 |
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$0.7667 / $0.8214 | Buy Now |
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SI7850DP-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7850DP-T1-E3
Vishay Siliconix
Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
|
Pbfree Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 6.2 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.8 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 74 ns | |
Turn-on Time-Max (ton) | 40 ns |