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Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M9830
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Newark | Mosfet Transistor, N Channel, 10.3 A, 60 V, 22 Mohm, 10 V, 3 V Rohs Compliant: Yes |Vishay SI7850DP-T1-E3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3178 |
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$1.3300 / $1.9300 | Buy Now |
DISTI #
71T8057
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Newark | N Channel Mosfet, 60V, 10.3A, Soic-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:10.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:1.8W Rohs Compliant: Yes |Vishay SI7850DP-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8580 / $1.0300 | Buy Now |
DISTI #
06J8171
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Newark | N Channel Mosfet, 60V, 10.3A, Soic-8, Transistor Polarity:N Channel, Continuous Drain Current Id:10.3A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.018Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V Rohs Compliant: Yes |Vishay SI7850DP-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.4300 | Buy Now |
DISTI #
SI7850DP-T1-E3
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Avnet Americas | Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7850DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.6004 / $0.7627 | Buy Now |
DISTI #
SI7850DP-T1-E3
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Avnet Americas | Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7850DP-T1-E3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.6004 / $0.7427 | Buy Now |
DISTI #
781-SI7850DP-E3
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Mouser Electronics | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 7978 |
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$0.8650 / $1.7400 | Buy Now |
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Future Electronics | Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 66000Reel |
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$0.6900 / $0.7150 | Buy Now |
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Future Electronics | Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.6700 / $0.6950 | Buy Now |
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Future Electronics | Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.6400 / $0.6650 | Buy Now |
DISTI #
79001631
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Verical | Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2346 | Americas - 24000 |
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$0.7196 / $0.8974 | Buy Now |
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SI7850DP-T1-E3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SI7850DP-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | POWERPAK, SO-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 6.2 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.8 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 74 ns | |
Turn-on Time-Max (ton) | 40 ns |