Part Details for SI7174DP-T1-GE3 by Vishay Siliconix
Overview of SI7174DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SI7174DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7174DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 75V 60A PPAK SO-8 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3305 In Stock |
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$1.4250 / $4.1500 | Buy Now |
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ES Components | SIL SI7174DP-T1-GE3 75V MSFET 3K/RL | 0 in Stock |
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RFQ | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
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$1.8400 | Buy Now |
Part Details for SI7174DP-T1-GE3
SI7174DP-T1-GE3 CAD Models
SI7174DP-T1-GE3 Part Data Attributes
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SI7174DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7174DP-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 75V 21A 8-Pin PowerPAK SO T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |