Part Details for SI4800 by NXP Semiconductors
Overview of SI4800 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4800
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Chip1Cloud | N-channel enhancement mode field-effect transistor | 11200 |
|
RFQ |
Part Details for SI4800
SI4800 CAD Models
SI4800 Part Data Attributes
|
SI4800
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
SI4800
NXP Semiconductors
TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SOIC | |
Package Description | PLASTIC, SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | NXP | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.0185 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI4800
This table gives cross-reference parts and alternative options found for SI4800. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4800, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7413ZPBF | Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | SI4800 vs IRF7413ZPBF |
IRF7821PBF | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | SI4800 vs IRF7821PBF |
TPCA8021-H | TRANSISTOR 27 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power | Toshiba America Electronic Components | SI4800 vs TPCA8021-H |
IRF7413PBF-1 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | International Rectifier | SI4800 vs IRF7413PBF-1 |
PHN1013T/R | TRANSISTOR 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, FET General Purpose Power | NXP Semiconductors | SI4800 vs PHN1013T/R |
STS8NF30L | 8A, 30V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | STMicroelectronics | SI4800 vs STS8NF30L |
IRF7471PBF | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | SI4800 vs IRF7471PBF |
IRF7413GPBF | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | International Rectifier | SI4800 vs IRF7413GPBF |
SI4800/T3 | TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power | NXP Semiconductors | SI4800 vs SI4800/T3 |
IRF7471 | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | SI4800 vs IRF7471 |