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TRANSISTOR 13000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4425DDY-T1-GE3CT-ND
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DigiKey | MOSFET P-CH 30V 19.7A 8SO Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
118924 In Stock |
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$0.2875 / $0.8700 | Buy Now |
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New Advantage Corporation | SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 15000 |
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$0.3867 / $0.4143 | Buy Now |
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SI4425DDY-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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SI4425DDY-T1-GE3
Vishay Siliconix
TRANSISTOR 13000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.0098 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 5.7 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI4425DDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4425DDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI6423DQ-T1-GE3 | TRANSISTOR 8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal | Vishay Siliconix | SI4425DDY-T1-GE3 vs SI6423DQ-T1-GE3 |
FDR838PD84Z | Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 | Fairchild Semiconductor Corporation | SI4425DDY-T1-GE3 vs FDR838PD84Z |
NDS9405/S62Z | 4300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | SI4425DDY-T1-GE3 vs NDS9405/S62Z |
FDS4435S62Z | Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4425DDY-T1-GE3 vs FDS4435S62Z |
NDH832P/L86Z | 4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | SI4425DDY-T1-GE3 vs NDH832P/L86Z |
FDS6575D84Z | Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4425DDY-T1-GE3 vs FDS6575D84Z |
FDS6679F011 | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4425DDY-T1-GE3 vs FDS6679F011 |
FDW262P_NL | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | Fairchild Semiconductor Corporation | SI4425DDY-T1-GE3 vs FDW262P_NL |
FDS4435BZ_F085 | -30V, -8.8A, 20mΩ, SO-8 P-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL | onsemi | SI4425DDY-T1-GE3 vs FDS4435BZ_F085 |
FDS6679Z_NL | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4425DDY-T1-GE3 vs FDS6679Z_NL |