Datasheets
SI4126DY-T1-GE3 by:

Trans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R

Part Details for SI4126DY-T1-GE3 by Vishay Siliconix

Overview of SI4126DY-T1-GE3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI4126DY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI4126DY-T1-GE3CT-ND
DigiKey MOSFET N-CH 30V 39A 8SO Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2474
In Stock
  • 1 $2.3800
  • 10 $1.9800
  • 100 $1.5756
  • 500 $1.3332
  • 1,000 $1.1312
  • 2,500 $1.0746
  • 5,000 $1.0342
$1.0342 / $2.3800 Buy Now
ES Components SIL SI4126DY-T1-GE3 30v MSFT 2.5/RL 0 in Stock
RFQ
New Advantage Corporation Single N-Channel 30 V 0.00275 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $1.3500
$1.3500 Buy Now

Part Details for SI4126DY-T1-GE3

SI4126DY-T1-GE3 CAD Models

SI4126DY-T1-GE3 Part Data Attributes:

SI4126DY-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI4126DY-T1-GE3 Vishay Siliconix Trans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 26.5 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 7.8 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4126DY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4126DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4126DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4126DY-T1-GE3 Small Signal Field-Effect Transistor, 26.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Intertechnologies SI4126DY-T1-GE3 vs SI4126DY-T1-GE3
SI4842BDY-T1-E3 Small Signal Field-Effect Transistor, 28A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI4126DY-T1-GE3 vs SI4842BDY-T1-E3
SI4842BDY-T1-E3 TRANSISTOR 28000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI4126DY-T1-GE3 vs SI4842BDY-T1-E3
SI4842BDY-T1-GE3 Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI4126DY-T1-GE3 vs SI4842BDY-T1-GE3
SI4842BDY-T1-GE3 TRANSISTOR 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI4126DY-T1-GE3 vs SI4842BDY-T1-GE3

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