Part Details for SI4842BDY-T1-GE3 by Vishay Intertechnologies
Overview of SI4842BDY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
Price & Stock for SI4842BDY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
16P3760
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Newark | N Channel Mosfet, 30V, 28A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:20V Rohs Compliant: Yes |Vishay SI4842BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.6000 | Buy Now |
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DISTI #
SI4842BDY-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4842BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$1.0460 / $1.3288 | Buy Now |
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DISTI #
781-SI4842BDY-T1-GE3
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Mouser Electronics | MOSFET 30V 28A 6.25W 4.2mohm @ 10V RoHS: Compliant | 3704 |
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$1.0200 / $2.3500 | Buy Now |
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Future Electronics | N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$1.0000 / $1.0300 | Buy Now |
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Future Electronics | N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
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$1.0000 / $1.0300 | Buy Now |
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DISTI #
SI4842BDY-T1-GE3
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TTI | MOSFET 30V 28A 6.25W 4.2mohm @ 10V pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
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$1.0000 / $1.0400 | Buy Now |
Part Details for SI4842BDY-T1-GE3
SI4842BDY-T1-GE3 CAD Models
SI4842BDY-T1-GE3 Part Data Attributes
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SI4842BDY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4842BDY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 6.25 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4842BDY-T1-GE3
This table gives cross-reference parts and alternative options found for SI4842BDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4842BDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI4126DY-T1-GE3 | Small Signal Field-Effect Transistor, 26.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Vishay Intertechnologies | SI4842BDY-T1-GE3 vs SI4126DY-T1-GE3 |
| SI4842BDY-T1-GE3 | TRANSISTOR 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal | Vishay Siliconix | SI4842BDY-T1-GE3 vs SI4842BDY-T1-GE3 |
| SI4842BDY-T1-E3 | Small Signal Field-Effect Transistor, 28A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SI4842BDY-T1-GE3 vs SI4842BDY-T1-E3 |