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Small Signal Field-Effect Transistor, 26.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
16P3727
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Newark | N Channel Mosfet, 30V, 39A, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:39A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Vishay SI4126DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1300 / $1.1900 | Buy Now |
DISTI #
57AJ0438
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Newark | Mosfet, N-Ch, 30V, 39A, Soic Rohs Compliant: Yes |Vishay SI4126DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.4800 / $2.2700 | Buy Now |
DISTI #
18X0010
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Newark | Mosfet, N Channel, 30V, 39A, Soic-8, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:39A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI4126DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.4900 | Buy Now |
DISTI #
38AH2369
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Newark | N-Channel 30V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI4126DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1400 | Buy Now |
DISTI #
SI4126DY-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4126DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$1.0800 / $1.3720 | Buy Now |
DISTI #
SI4126DY-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4126DY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$1.0800 / $1.3360 | Buy Now |
DISTI #
781-SI4126DY-T1-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | 4017 |
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$1.0400 / $2.3800 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.00275 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 2500Reel |
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$1.0200 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.00275 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$1.0200 | Buy Now |
DISTI #
SI4126DY-T1-GE3
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TTI | MOSFET 30V Vds 20V Vgs SO-8 pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 15000 In Stock |
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$1.0300 / $1.0700 | Buy Now |
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SI4126DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4126DY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 26.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 26.5 A | |
Drain-source On Resistance-Max | 0.0028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 7.8 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI4126DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4126DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI4842BDY-T1-E3 | Small Signal Field-Effect Transistor, 28A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SI4126DY-T1-GE3 vs SI4842BDY-T1-E3 |
SI4842BDY-T1-E3 | TRANSISTOR 28000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal | Vishay Siliconix | SI4126DY-T1-GE3 vs SI4842BDY-T1-E3 |
SI4842BDY-T1-GE3 | Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SI4126DY-T1-GE3 vs SI4842BDY-T1-GE3 |
SI4842BDY-T1-GE3 | TRANSISTOR 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal | Vishay Siliconix | SI4126DY-T1-GE3 vs SI4842BDY-T1-GE3 |