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Part Details for SI2337DS-T1-E3 by Vishay Siliconix
Overview of SI2337DS-T1-E3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2337DS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI2337DS-T1-E3CT-ND
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DigiKey | MOSFET P-CH 80V 2.2A SOT23-3 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
28211 In Stock |
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$0.3632 / $0.9700 | Buy Now |
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DISTI #
70026414
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RS | Trans Mosfet P-Ch 80V 1.2A 3-Pin To-236 T/R | Siliconix / Vishay SI2337DS-T1-E3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 2840 |
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$0.3200 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 33000 |
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$0.3600 / $0.3857 | Buy Now |
Part Details for SI2337DS-T1-E3
SI2337DS-T1-E3 CAD Models
SI2337DS-T1-E3 Part Data Attributes
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SI2337DS-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI2337DS-T1-E3
Vishay Siliconix
TRANSISTOR 1.2 mA, 80 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 0.0012 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -50 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2337DS-T1-E3
This table gives cross-reference parts and alternative options found for SI2337DS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2337DS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BS170RLRMG | Single N-Channel Small Signal MOSFET 60V, 500mA, 5Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD | onsemi | SI2337DS-T1-E3 vs BS170RLRMG |
| VN0116N3P003 | Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | SI2337DS-T1-E3 vs VN0116N3P003 |
| VN1310N3P008 | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | SI2337DS-T1-E3 vs VN1310N3P008 |
| SN7002NL6327 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | SI2337DS-T1-E3 vs SN7002NL6327 |
| BSS123 | Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | SI2337DS-T1-E3 vs BSS123 |
| MMBF5103S62Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | Texas Instruments | SI2337DS-T1-E3 vs MMBF5103S62Z |
| VN1310N3P001 | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | SI2337DS-T1-E3 vs VN1310N3P001 |
| MMBF5103D87Z | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | SI2337DS-T1-E3 vs MMBF5103D87Z |
| SSM3J313T | TRANSISTOR 1600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSM, 2-3S1A, 3 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | SI2337DS-T1-E3 vs SSM3J313T |
| ZVP4424CSTOF | Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | SI2337DS-T1-E3 vs ZVP4424CSTOF |