Datasheets
SI1900DL-T1-E3 by:

TRANSISTOR 590 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal

Part Details for SI1900DL-T1-E3 by Vishay Siliconix

Overview of SI1900DL-T1-E3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for SI1900DL-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI1900DL-T1-E3CT-ND
DigiKey MOSFET 2N-CH 30V 0.59A SC70-6 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 28470
In Stock
  • 1 $0.5800
  • 10 $0.4910
  • 100 $0.3414
  • 500 $0.2665
  • 1,000 $0.2166
  • 3,000 $0.1937
  • 6,000 $0.1838
  • 9,000 $0.1707
  • 30,000 $0.1668
$0.1668 / $0.5800 Buy Now
DISTI # 70026094
RS MOSFET, N-CHANNEL, 30V, 0.63A, SOT-363 | Siliconix / Vishay SI1900DL-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.4910
  • 30,000 $0.4670
  • 150,000 $0.4420
  • 300,000 $0.4170
$0.4170 / $0.4910 RFQ
ES Components SIL SI1900DL-T1-E3 30V MOSFET 3K/RL 0 in Stock
RFQ

Part Details for SI1900DL-T1-E3

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SI1900DL-T1-E3 Part Data Attributes

SI1900DL-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI1900DL-T1-E3 Vishay Siliconix TRANSISTOR 590 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SC-70
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 0.59 A
Drain-source On Resistance-Max 0.48 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI1900DL-T1-E3

This table gives cross-reference parts and alternative options found for SI1900DL-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1900DL-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI1900DL-T1-E3 Small Signal Field-Effect Transistor, 0.59A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN Vishay Intertechnologies SI1900DL-T1-E3 vs SI1900DL-T1-E3
Part Number Description Manufacturer Compare
SI1902DL Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Siliconix SI1900DL-T1-E3 vs SI1902DL
FDG6303N_NL Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation SI1900DL-T1-E3 vs FDG6303N_NL
FDG6335N N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ, 3000-REEL onsemi SI1900DL-T1-E3 vs FDG6335N
SIA922EDJ-T1-GE3 Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 Vishay Intertechnologies SI1900DL-T1-E3 vs SIA922EDJ-T1-GE3
FDG6335N Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation SI1900DL-T1-E3 vs FDG6335N
FDG6303NL99Z Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation SI1900DL-T1-E3 vs FDG6303NL99Z
SI1902DL Small Signal Field-Effect Transistor, 0.66A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Vishay Intertechnologies SI1900DL-T1-E3 vs SI1902DL
FDG6301NL99Z Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation SI1900DL-T1-E3 vs FDG6301NL99Z
FDG6301N Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω, 3000-REEL onsemi SI1900DL-T1-E3 vs FDG6301N
FDG6303ND87Z Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation SI1900DL-T1-E3 vs FDG6303ND87Z

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