Part Details for SIA922EDJ-T1-GE3 by Vishay Intertechnologies
Overview of SIA922EDJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for SIA922EDJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 80 |
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RFQ |
Part Details for SIA922EDJ-T1-GE3
SIA922EDJ-T1-GE3 CAD Models
SIA922EDJ-T1-GE3 Part Data Attributes
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SIA922EDJ-T1-GE3
Vishay Intertechnologies
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Datasheet
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SIA922EDJ-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.072 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 7.8 W | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIA922EDJ-T1-GE3
This table gives cross-reference parts and alternative options found for SIA922EDJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA922EDJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDG6301N_F085 | Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN | Fairchild Semiconductor Corporation | SIA922EDJ-T1-GE3 vs FDG6301N_F085 |
| FDG6303N_NL | Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation | SIA922EDJ-T1-GE3 vs FDG6303N_NL |
| FDG6301N | 220mA, 25V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN | Rochester Electronics LLC | SIA922EDJ-T1-GE3 vs FDG6301N |
| FDG6301N_F085 | 25V, 0.22A,2.6Ω, SC-70-6, Logic Level Dual N-Channel Planar, SC70 6L, 15000-TAPE REEL | onsemi | SIA922EDJ-T1-GE3 vs FDG6301N_F085 |
| FDG6335N | Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation | SIA922EDJ-T1-GE3 vs FDG6335N |
| SI1902DL | Small Signal Field-Effect Transistor, 0.66A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Vishay Intertechnologies | SIA922EDJ-T1-GE3 vs SI1902DL |
| FDG6301N_NL | Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation | SIA922EDJ-T1-GE3 vs FDG6301N_NL |
| FDG6335N | 700mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN | Rochester Electronics LLC | SIA922EDJ-T1-GE3 vs FDG6335N |
| SI1902DL-T1 | Small Signal Field-Effect Transistor, 0.66A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Vishay Siliconix | SIA922EDJ-T1-GE3 vs SI1902DL-T1 |
| SI1900DL-T1-E3 | Small Signal Field-Effect Transistor, 0.59A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN | Vishay Intertechnologies | SIA922EDJ-T1-GE3 vs SI1900DL-T1-E3 |