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Part Details for SI1308EDL-T1-GE3 by Vishay Siliconix
Overview of SI1308EDL-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI1308EDL-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SI1308EDL-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 1.4A SOT323 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
33728 In Stock |
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$0.0947 / $0.4400 | Buy Now |
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DISTI #
70459651
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RS | Si1308EDL-T1-GE3 N-channel MOSFET Transistor, 1.5 A, 30 V, 3-Pin SC-70 | Siliconix / Vishay SI1308EDL-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.2410 / $0.2830 | RFQ |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 273000 |
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$0.1193 / $0.1279 | Buy Now |
Part Details for SI1308EDL-T1-GE3
SI1308EDL-T1-GE3 CAD Models
SI1308EDL-T1-GE3 Part Data Attributes:
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SI1308EDL-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI1308EDL-T1-GE3
Vishay Siliconix
Si1308EDL N-Channel 30 V (D-S) MOSFET
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SC-70 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 1.4 A | |
| Drain-source On Resistance-Max | 0.132 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 11 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI1308EDL-T1-GE3
This table gives cross-reference parts and alternative options found for SI1308EDL-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1308EDL-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI1304BDL-T1-E3 | TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 3 PIN, FET General Purpose Small Signal | Vishay Siliconix | SI1308EDL-T1-GE3 vs SI1304BDL-T1-E3 |
| MMBF0201NLT1 | 300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Motorola Mobility LLC | SI1308EDL-T1-GE3 vs MMBF0201NLT1 |
| MMBF0201NLT3 | 300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, CASE 318-08, 3 PIN | onsemi | SI1308EDL-T1-GE3 vs MMBF0201NLT3 |
| MMBF0201NLT1 | Single N-Channel Small Signal Logic Level Power MOSFET 20V, 300mA, 1Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | SI1308EDL-T1-GE3 vs MMBF0201NLT1 |
| SI1304BDL-T1-E3 | Small Signal Field-Effect Transistor, 0.85A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 3 PIN | Vishay Intertechnologies | SI1308EDL-T1-GE3 vs SI1304BDL-T1-E3 |
| BSH103T/R | TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SMD-3, 3 PIN, FET General Purpose Small Signal | NXP Semiconductors | SI1308EDL-T1-GE3 vs BSH103T/R |
| SI1300BDL-T1-E3 | Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN | Vishay Intertechnologies | SI1308EDL-T1-GE3 vs SI1300BDL-T1-E3 |
| BSH103 | TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal | NXP Semiconductors | SI1308EDL-T1-GE3 vs BSH103 |
| SI1308EDL-T1-GE3 | Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 3 PIN | Vishay Intertechnologies | SI1308EDL-T1-GE3 vs SI1308EDL-T1-GE3 |
| MMBF0201NLT1G | Single N-Channel Small Signal Logic Level Power MOSFET 20V, 300mA, 1Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | SI1308EDL-T1-GE3 vs MMBF0201NLT1G |