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Part Details for SI1031R-T1-GE3 by Vishay Siliconix
Overview of SI1031R-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI1031R-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI1031R-T1-GE3CT-ND
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DigiKey | MOSFET P-CH 20V 140MA SC75A Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11891 In Stock |
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$0.1073 / $0.5000 | Buy Now |
Part Details for SI1031R-T1-GE3
SI1031R-T1-GE3 CAD Models
SI1031R-T1-GE3 Part Data Attributes
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SI1031R-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI1031R-T1-GE3
Vishay Siliconix
TRANSISTOR 140 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SC-75A | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | LOW THRESHOLD | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 0.14 A | |
| Drain-source On Resistance-Max | 8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.28 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI1031R-T1-GE3
This table gives cross-reference parts and alternative options found for SI1031R-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1031R-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BS170RLRMG | Single N-Channel Small Signal MOSFET 60V, 500mA, 5Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD | onsemi | SI1031R-T1-GE3 vs BS170RLRMG |
| VN0116N3P003 | Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | SI1031R-T1-GE3 vs VN0116N3P003 |
| VN1310N3P008 | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | SI1031R-T1-GE3 vs VN1310N3P008 |
| SN7002NL6327 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | SI1031R-T1-GE3 vs SN7002NL6327 |
| BSS123 | Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | SI1031R-T1-GE3 vs BSS123 |
| MMBF5103S62Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | Texas Instruments | SI1031R-T1-GE3 vs MMBF5103S62Z |
| VN1310N3P001 | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | SI1031R-T1-GE3 vs VN1310N3P001 |
| MMBF5103D87Z | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | SI1031R-T1-GE3 vs MMBF5103D87Z |
| SSM3J313T | TRANSISTOR 1600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSM, 2-3S1A, 3 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | SI1031R-T1-GE3 vs SSM3J313T |
| ZVP4424CSTOF | Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | SI1031R-T1-GE3 vs ZVP4424CSTOF |