Part Details for SHD226408 by Sensitron Semiconductors
Overview of SHD226408 by Sensitron Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SHD226408
SHD226408 CAD Models
SHD226408 Part Data Attributes
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SHD226408
Sensitron Semiconductors
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Datasheet
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SHD226408
Sensitron Semiconductors
Power Field-Effect Transistor, 3.9A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SENSITRON SEMICONDUCTOR | |
Part Package Code | TO-257AA | |
Package Description | FLANGE MOUNT, S-XSFM-P3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 3.9 A | |
Drain-source On Resistance-Max | 3.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 100 pF | |
JEDEC-95 Code | TO-257AA | |
JESD-30 Code | R-XSFM-P3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 220 ns | |
Turn-on Time-Max (ton) | 80 ns |
Alternate Parts for SHD226408
This table gives cross-reference parts and alternative options found for SHD226408. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SHD226408, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SDF4N100JABVGSZ | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JABVGSZ |
SDF4N100JAAEHU1Z | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JAAEHU1Z |
SDF4N100JAAVHSB | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JAAVHSB |
SDF4N100JAASGSZ | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JAASGSZ |
SDF4N100JABVHU1Z | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JABVHU1Z |
SDF4N100JABEGU1Z | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JABEGU1Z |
SDF4N100JAAEGSZ | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JAAEGSZ |
SDF4N100JABXGSB | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JABXGSB |
SDF4N100JABEGSZ | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JABEGSZ |
SDF4N100JABSGD1Z | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SHD226408 vs SDF4N100JABSGD1Z |