There are no models available for this part yet.
Overview of SDF4N100JABEGSZ by Solitron Devices Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Aerospace and Defense
Energy and Power Systems
CAD Models for SDF4N100JABEGSZ by Solitron Devices Inc
Part Data Attributes for SDF4N100JABEGSZ by Solitron Devices Inc
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Pbfree Code
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No
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Rohs Code
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No
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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SOLITRON DEVICES INC
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Part Package Code
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TO-254Z
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Package Description
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FLANGE MOUNT, S-MSFM-T3
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Pin Count
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3
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Additional Feature
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CUSTOM BENT LEAD OPTIONS ARE AVAILABLE
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Case Connection
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ISOLATED
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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1000 V
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Drain Current-Max (ID)
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4 A
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Drain-source On Resistance-Max
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3.5 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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S-MSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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METAL
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Package Shape
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SQUARE
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Package Style
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FLANGE MOUNT
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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100 W
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Pulsed Drain Current-Max (IDM)
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16 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Element Material
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SILICON
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Turn-off Time-Max (toff)
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230 ns
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Turn-on Time-Max (ton)
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100 ns
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Alternate Parts for SDF4N100JABEGSZ
This table gives cross-reference parts and alternative options found for SDF4N100JABEGSZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SDF4N100JABEGSZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SDF4N100JABVGSZ | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JABVGSZ |
| SDF4N100JAAEHU1Z | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JAAEHU1Z |
| SDF4N100JAAVHSB | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JAAVHSB |
| SDF4N100JAASGSZ | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JAASGSZ |
| SDF4N100JABVHU1Z | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JABVHU1Z |
| SDF4N100JABEGU1Z | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JABEGU1Z |
| SDF4N100JAAEGSZ | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JAAEGSZ |
| SDF4N100JABXGSB | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JABXGSB |
| SDF4N100JABSGD1Z | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JABSGD1Z |
| SDF4N100JAASHU1B | Power Field-Effect Transistor, 4A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N100JABEGSZ vs SDF4N100JAASHU1B |