Part Details for SGW10N60RUFD by Fairchild Semiconductor Corporation
Overview of SGW10N60RUFD by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SGW10N60RUFD
SGW10N60RUFD CAD Models
SGW10N60RUFD Part Data Attributes:
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SGW10N60RUFD
Fairchild Semiconductor Corporation
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Datasheet
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SGW10N60RUFD
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 16 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 220 ns | |
Gate-Emitter Thr Voltage-Max | 8 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 284 ns | |
Turn-on Time-Nom (ton) | 49 ns |
Alternate Parts for SGW10N60RUFD
This table gives cross-reference parts and alternative options found for SGW10N60RUFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGW10N60RUFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | SGW10N60RUFD vs HGT1S3N60B3S |
APT45GL100BN | 45A, 1000V, N-CHANNEL IGBT, TO-247 | Microsemi Corporation | SGW10N60RUFD vs APT45GL100BN |
IRG4BC20W-S | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | Infineon Technologies AG | SGW10N60RUFD vs IRG4BC20W-S |
HGTP20N60C3R | Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel | Fairchild Semiconductor Corporation | SGW10N60RUFD vs HGTP20N60C3R |
IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | SGW10N60RUFD vs IRGPC50U |
IRG4BC20FD-STRR | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | SGW10N60RUFD vs IRG4BC20FD-STRR |
HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | SGW10N60RUFD vs HGTD7N60C3S9A |
HGTP12N60C3 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | Fairchild Semiconductor Corporation | SGW10N60RUFD vs HGTP12N60C3 |
IRG4BC40K | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | SGW10N60RUFD vs IRG4BC40K |
1MB10-120 | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fuji Electric Co Ltd | SGW10N60RUFD vs 1MB10-120 |