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SGH23N60UF by:

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN

Part Details for SGH23N60UF by Fairchild Semiconductor Corporation

Overview of SGH23N60UF by Fairchild Semiconductor Corporation

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Part Details for SGH23N60UF

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SGH23N60UF Part Data Attributes

SGH23N60UF Fairchild Semiconductor Corporation
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SGH23N60UF Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-3P
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH SPEED SWITCHING
Collector Current-Max (IC) 23 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 220 ns
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 155 ns
Turn-on Time-Nom (ton) 32 ns

Alternate Parts for SGH23N60UF

This table gives cross-reference parts and alternative options found for SGH23N60UF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGH23N60UF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation SGH23N60UF vs HGT1S3N60B3S
HGTP7N60B3 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation SGH23N60UF vs HGTP7N60B3
GT10J312 TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components SGH23N60UF vs GT10J312
IXSH35N100A Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation SGH23N60UF vs IXSH35N100A
IKA06N60TXKSA1 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SGH23N60UF vs IKA06N60TXKSA1
IRG4PC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG SGH23N60UF vs IRG4PC50U
IRG4PC30KD Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG SGH23N60UF vs IRG4PC30KD
IXGH28N60BD1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation SGH23N60UF vs IXGH28N60BD1
HGTP7N60A4D Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation SGH23N60UF vs HGTP7N60A4D
SGH40N60UFD Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Samsung Semiconductor SGH23N60UF vs SGH40N60UFD

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