Part Details for SGH20N60RUFD by Fairchild Semiconductor Corporation
Overview of SGH20N60RUFD by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SGH20N60RUFD
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | Short Circuit Rated IGBT | 4000 |
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RFQ |
Part Details for SGH20N60RUFD
SGH20N60RUFD CAD Models
SGH20N60RUFD Part Data Attributes
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SGH20N60RUFD
Fairchild Semiconductor Corporation
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Datasheet
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SGH20N60RUFD
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3P | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Collector Current-Max (IC) | 32 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 168 ns | |
| Gate-Emitter Thr Voltage-Max | 8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 363 ns | |
| Turn-on Time-Nom (ton) | 81 ns |
Alternate Parts for SGH20N60RUFD
This table gives cross-reference parts and alternative options found for SGH20N60RUFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGH20N60RUFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGH20N60RUFD | Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Samsung Semiconductor | SGH20N60RUFD vs SGH20N60RUFD |