Datasheets
SGD02N60 by:

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA

Part Details for SGD02N60 by Siemens

Overview of SGD02N60 by Siemens

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Part Details for SGD02N60

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SGD02N60 Part Data Attributes:

SGD02N60 Siemens
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SGD02N60 Siemens Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, FAST
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 354 ns
Turn-on Time-Nom (ton) 33 ns

Alternate Parts for SGD02N60

This table gives cross-reference parts and alternative options found for SGD02N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGD02N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGD02N60 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3 Infineon Technologies AG SGD02N60 vs SGD02N60
SGD02N60BUMA1 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3 Infineon Technologies AG SGD02N60 vs SGD02N60BUMA1
Part Number Description Manufacturer Compare
IRG4RC10KTRLPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier SGD02N60 vs IRG4RC10KTRLPBF
IRG4RC10KTRRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier SGD02N60 vs IRG4RC10KTRRPBF
SGD02N60BUMA1 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3 Infineon Technologies AG SGD02N60 vs SGD02N60BUMA1
HGTD3N60C3S9A 6A, 600V, N-CHANNEL IGBT, TO-252AA Intersil Corporation SGD02N60 vs HGTD3N60C3S9A
SGD02N60 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3 Infineon Technologies AG SGD02N60 vs SGD02N60
IRG4RC10KTRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier SGD02N60 vs IRG4RC10KTRPBF
HGTD3N60C3S 6A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252AA, 3 PIN Intersil Corporation SGD02N60 vs HGTD3N60C3S

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