Datasheets
SD211DE by:

Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4

Part Details for SD211DE by Calogic Inc

Overview of SD211DE by Calogic Inc

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for SD211DE

Part # Distributor Description Stock Price Buy
Future Electronics SD210 Series 30 V 50 mA High-Speed Analog N-Channel DMOS FETs - TO-72 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 100 Container: Bag 0
Bag
  • 1 $8.0400
  • 5 $7.9300
  • 25 $7.8300
  • 50 $7.7900
  • 150 $7.6500
$7.6500 / $8.0400 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-72 8
  • 1 $8.9760
  • 2 $7.4800
  • 4 $6.5824
$6.5824 / $8.9760 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-72 19
  • 1 $11.8500
  • 4 $8.6900
  • 10 $7.9000
$7.9000 / $11.8500 Buy Now
Karl Kruse GmbH & Co KG Trans MOSFET N-CH 30V 0.05A 4-Pin TO-72 500
RFQ
NAC   RoHS: Compliant Min Qty: 500 Package Multiple: 1 0
  • 1 $6.7500
  • 250 $6.0800
  • 500 $5.9400
$5.9400 / $6.7500 Buy Now
ES Components CA SD211DE BARE DIE 215 in Stock
RFQ

Part Details for SD211DE

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SD211DE Part Data Attributes:

SD211DE Calogic Inc
Buy Now Datasheet
Compare Parts:
SD211DE Calogic Inc Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer CALOGIC LLC
Part Package Code TO-72
Package Description HERMETIC SEALED PACKAGE-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.90.00.00
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection SUBSTRATE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 0.05 A
Drain-source On Resistance-Max 70 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.5 pF
JEDEC-95 Code TO-72
JESD-30 Code O-MBCY-W4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.2 W
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SD211DE

This table gives cross-reference parts and alternative options found for SD211DE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SD211DE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SD211DE Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF Teledyne Technologies Inc SD211DE vs SD211DE
Part Number Description Manufacturer Compare
SD211DE Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, TO-72, 4 PIN Universal Semiconductor Inc SD211DE vs SD211DE
SD211DE Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix SD211DE vs SD211DE
SD211DE Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF Teledyne Technologies Inc SD211DE vs SD211DE
SD211DE Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72 Signetics SD211DE vs SD211DE
SD211DE N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 Philips Semiconductors SD211DE vs SD211DE
SD211DE TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal NXP Semiconductors SD211DE vs SD211DE
BSD213 TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal NXP Semiconductors SD211DE vs BSD213
2N7106 Small Signal Field-Effect Transistor, 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, Solitron Devices Inc SD211DE vs 2N7106

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