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Transistors Power Field-Effect Transistors RSS075P03TB

Transistors
RSS075P03TB
ROHM Semiconductor
Description: Power Field-Effect Transistor, 7.5A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Overview of RSS075P03TB by ROHM Semiconductor

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Price & Stock for RSS075P03TB by ROHM Semiconductor

Part # Manufacturer Description Stock Price Buy
DISTI # RSS075P03TBCT-ND
DigiKey MOSFET P-CH 30V 7.5A 8SOP Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $1.7300
$1.7300 Buy Now

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Part Data Attributes for RSS075P03TB by ROHM Semiconductor
Parametric Data

RSS075P03TB
ROHM Semiconductor
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ROHM CO LTD
Part Package Code
SOT
Package Description
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
ROHM Semiconductor
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
7.5 A
Drain-source On Resistance-Max
0.021 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e2
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Copper (Sn/Cu)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. RSS075P03TB
    ROHM Semiconductor
    Power Field-Effect Transistor, 7.5A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
    VS

Alternate Parts for RSS075P03TB

This table gives cross-reference parts and alternative options found for RSS075P03TB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RSS075P03TB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HP4936DYT Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Harris Semiconductor RSS075P03TB vs HP4936DYT
HAT2027R 7A, 20V, 0.053ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation RSS075P03TB vs HAT2027R
FDS6961AZD84Z Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation RSS075P03TB vs FDS6961AZD84Z
FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL Fairchild Semiconductor Corporation RSS075P03TB vs FDS6812A
IRF7403 Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG RSS075P03TB vs IRF7403
HUF76105DK8T Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor RSS075P03TB vs HUF76105DK8T
FW206 Power Field-Effect Transistor, 5A I(D), 30V, 0.12ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd RSS075P03TB vs FW206
F4H3PD Power Field-Effect Transistor, 3.5A I(D), 30V, 0.21ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd RSS075P03TB vs F4H3PD
FW203 Power Field-Effect Transistor, 5A I(D), 30V, 0.078ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd RSS075P03TB vs FW203
IRF7314 Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier RSS075P03TB vs IRF7314

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