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Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RSQ035P03CT-ND
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DigiKey | MOSFET P-CH 30V 3.5A TSMT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2625 In Stock |
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$0.3038 / $0.7100 | Buy Now |
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Future Electronics | P-Channel 1.25 W -30 V 95 mOhm Surface Mount 4 V Drive MosFet - TSMT-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.3000 / $0.3200 | Buy Now |
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ComSIT USA | 4 V DRIVE PCH MOS FET Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 |
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RFQ | |
DISTI #
RSQ035P03TR
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Avnet Silica | Trans MOSFET P-CH 30V 3.5A 6-Pin TSMT T/R (Alt: RSQ035P03TR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 1 Weeks, 6 Days | Silica - 0 |
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Buy Now | |
DISTI #
1525532
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element14 Asia-Pacific | MOSFET, P, 30V, 3.5A RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.2415 / $0.6357 | Buy Now |
DISTI #
1525532
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Farnell | MOSFET, P, 30V, 3.5A RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Each | 0 |
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$0.1606 | Buy Now |
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LCSC | 30V 3.5A 45m10V3.5A 1.25W 2.5V1mA 1PCSPChannel SOT-457-6 MOSFETs ROHS | 2570 |
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$0.1266 / $0.2014 | Buy Now |
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Sense Electronic Company Limited | SOT23-6 | 2375 |
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RFQ |
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RSQ035P03TR
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RSQ035P03TR
ROHM Semiconductor
Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Pin Count | 6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.09 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for RSQ035P03TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RSQ035P03TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N5909 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, | Solitron Devices Inc | RSQ035P03TR vs 2N5909 |
PMGD290XN,115 | PMGD290XN - Dual N-channel TrenchMOS extremely low level FET@en-us TSSOP 6-Pin | Nexperia | RSQ035P03TR vs PMGD290XN,115 |
FDS6910 | Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 7.5A, 17mΩ, 2500-REEL | onsemi | RSQ035P03TR vs FDS6910 |
SI3441DV-T1 | Small Signal Field-Effect Transistor, 1-Element, Silicon | Vishay Siliconix | RSQ035P03TR vs SI3441DV-T1 |
2N5517 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | RSQ035P03TR vs 2N5517 |
IRF7752GPBF | Small Signal Field-Effect Transistor, 4.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, HALOGEN AND LEAD FREE, TSSOP-8 | Infineon Technologies AG | RSQ035P03TR vs IRF7752GPBF |
BSH301 | TRANSISTOR 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | NXP Semiconductors | RSQ035P03TR vs BSH301 |
SI3433CDV-T1-GE3 | Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | RSQ035P03TR vs SI3433CDV-T1-GE3 |
2N6483 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | RSQ035P03TR vs 2N6483 |
SI3465DV-T1-E3 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TSOP-6 | Vishay Intertechnologies | RSQ035P03TR vs SI3465DV-T1-E3 |