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Transistors Power Field-Effect Transistors RFP50N06

RFP50N06
Description: N-Channel Power MOSFET 60V, 50A, 22mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL

Overview of RFP50N06 by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for RFP50N06 by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   200
RFQ
Bristol Electronics   Min Qty: 4 19
  • 4 $1.6500
  • 14 $1.2375
$1.2375 / $1.6500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 310
  • 1 $1.7395
  • 55 $1.0437
  • 145 $0.9393
$0.9393 / $1.7395 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 15
  • 1 $2.2000
  • 3 $1.6500
  • 16 $1.3750
$1.3750 / $2.2000 Buy Now
Rochester Electronics Power Field-Effect Transistor, 50A, 60V, 0.022ohm, N-Channel, MOSFET, TO-220AB ' RoHS: Compliant Status: Active Min Qty: 1 665
  • 1 $1.0900
  • 25 $1.0700
  • 100 $1.0300
  • 500 $0.9823
  • 1,000 $0.9277
$0.9277 / $1.0900 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 50
  • 1 $3.8500
  • 100 $2.8800
  • 1,000 $2.5000
$2.5000 / $3.8500 Buy Now

CAD Models for RFP50N06 by Fairchild Semiconductor Corporation
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Part Data Attributes for RFP50N06 by Fairchild Semiconductor Corporation
Parametric Data

RFP50N06
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-220
Pin Count
3
Manufacturer Package Code
TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
50 A
Drain-source On Resistance-Max
0.022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
131 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. RFP50N06
    Fairchild Semiconductor Corporation
    N-Channel Power MOSFET 60V, 50A, 22mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL
    VS

Alternate Parts for RFP50N06

This table gives cross-reference parts and alternative options found for RFP50N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP50N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFP50N06_NL Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP50N06 vs RFP50N06_NL
RFP50N06 Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP50N06 vs RFP50N06
Part Number Description Manufacturer Compare
RFG50N06 Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Fairchild Semiconductor Corporation RFP50N06 vs RFG50N06
RFP12P08 12A, 80V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP50N06 vs RFP12P08
RFG45N06 Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Fairchild Semiconductor Corporation RFP50N06 vs RFG45N06
RFP4N05 4A, 50V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP50N06 vs RFP4N05
RFP15N05L Power Field-Effect Transistor, 15A I(D), 50V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP50N06 vs RFP15N05L
RFP30P05 Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation RFP50N06 vs RFP30P05
RFP4N05 Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP50N06 vs RFP4N05
RFP12P08 Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation RFP50N06 vs RFP12P08
RFP2N20L 2A, 200V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP50N06 vs RFP2N20L
SSS7N60A Power Field-Effect Transistor, 4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Fairchild Semiconductor Corporation RFP50N06 vs SSS7N60A

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