Datasheets
RFP3N50 by:

Power Field-Effect Transistor, 3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for RFP3N50 by Harris Semiconductor

Overview of RFP3N50 by Harris Semiconductor

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Part Details for RFP3N50

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RFP3N50 Part Data Attributes

RFP3N50 Harris Semiconductor
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RFP3N50 Harris Semiconductor Power Field-Effect Transistor, 3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 60 W
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 5 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 210 ns
Turn-on Time-Max (ton) 105 ns

Alternate Parts for RFP3N50

This table gives cross-reference parts and alternative options found for RFP3N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP3N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF823 2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFP3N50 vs IRF823
IRF823 Power Field-Effect Transistor, 2.2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors RFP3N50 vs IRF823
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors RFP3N50 vs BUZ74
MTP2N45 2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFP3N50 vs MTP2N45
IRF821-009 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier RFP3N50 vs IRF821-009
MTP3N50 Power Field-Effect Transistor, 3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products RFP3N50 vs MTP3N50
STP4NB50 3.8A, 500V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics RFP3N50 vs STP4NB50
MTP3N45 3A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFP3N50 vs MTP3N45
IRF822 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Thomson Consumer Electronics RFP3N50 vs IRF822
BUZ74 2.4A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited RFP3N50 vs BUZ74
Part Number Description Manufacturer Compare
IRF821 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP3N50 vs IRF821
IRF823 2.2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics RFP3N50 vs IRF823
MTP2N45 2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFP3N50 vs MTP2N45
IRF822 Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP3N50 vs IRF822
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors RFP3N50 vs BUZ74
IRF820PBF Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix RFP3N50 vs IRF820PBF
IRF822 Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors RFP3N50 vs IRF822
IRF821 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2.5A I(D),TO-220AB Intersil Corporation RFP3N50 vs IRF821
IRF823 Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP3N50 vs IRF823
IRF823 2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP3N50 vs IRF823

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