Datasheets
RFP12N10L by:

N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL

Part Details for RFP12N10L by Fairchild Semiconductor Corporation

Overview of RFP12N10L by Fairchild Semiconductor Corporation

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Price & Stock for RFP12N10L

Part # Distributor Description Stock Price Buy
Bristol Electronics   200
RFQ
Bristol Electronics   Min Qty: 4 54
  • 4 $1.5000
  • 15 $0.9750
  • 53 $0.5625
$0.5625 / $1.5000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 263
  • 1 $1.6765
  • 61 $0.8383
  • 240 $0.6706
$0.6706 / $1.6765 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 43
  • 1 $2.0000
  • 4 $1.6000
  • 14 $1.0000
$1.0000 / $2.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 9
  • 1 $3.1600
  • 3 $2.3700
$2.3700 / $3.1600 Buy Now
ComSIT USA Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Europe - 25200
RFQ
Chip 1 Exchange INSTOCK 55
RFQ

Part Details for RFP12N10L

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RFP12N10L Part Data Attributes:

RFP12N10L Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
RFP12N10L Fairchild Semiconductor Corporation N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description TO-220AB, 3 PIN
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFP12N10L

This table gives cross-reference parts and alternative options found for RFP12N10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP12N10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFP12N10L N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ, 800-TUBE onsemi RFP12N10L vs RFP12N10L
Part Number Description Manufacturer Compare
RFP8P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation RFP12N10L vs RFP8P05
RFP15N08L Power Field-Effect Transistor, 15A I(D), 80V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP12N10L vs RFP15N08L
RFG50N06LE Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor RFP12N10L vs RFG50N06LE
RFP14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP12N10L vs RFP14N06L
STP3NA60FI 2.1A, 600V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN STMicroelectronics RFP12N10L vs STP3NA60FI
RFP50N06LE Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP12N10L vs RFP50N06LE
RFP14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP12N10L vs RFP14N06L
RFP15P05 Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP12N10L vs RFP15P05
RFP15P06 Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP12N10L vs RFP15P06
RFP70N06 N-Channel Power MOSFET 60V, 70A, 14mΩ, 800-TUBE onsemi RFP12N10L vs RFP70N06

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