Part Details for RFP10N12 by Harris Semiconductor
Overview of RFP10N12 by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFP10N12
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 3 |
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Part Details for RFP10N12
RFP10N12 CAD Models
RFP10N12 Part Data Attributes
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RFP10N12
Harris Semiconductor
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Datasheet
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RFP10N12
Harris Semiconductor
Power Field-Effect Transistor, 10A I(D), 120V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, O-MBFM-P2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 120 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 100 pF | |
JEDEC-95 Code | TO-204AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 60 W | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 270 ns | |
Turn-on Time-Max (ton) | 310 ns |
Alternate Parts for RFP10N12
This table gives cross-reference parts and alternative options found for RFP10N12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP10N12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF643 | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | RFP10N12 vs IRF643 |
IRF643 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP10N12 vs IRF643 |
IRF643 | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | RFP10N12 vs IRF643 |
IRF643PBF | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | RFP10N12 vs IRF643PBF |
IRF643 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | RFP10N12 vs IRF643 |
IRF643 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | RFP10N12 vs IRF643 |
RFP10N12 | 10A, 120V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | RFP10N12 vs RFP10N12 |
IRF643 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | RFP10N12 vs IRF643 |
IRF643 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | RFP10N12 vs IRF643 |
MTP15N15 | Power Field-Effect Transistor, 15A I(D), 150V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | RFP10N12 vs MTP15N15 |