There are no models available for this part yet.
Overview of IRF643 by Thomson Consumer Electronics
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF643 by Thomson Consumer Electronics
Part Data Attributes for IRF643 by Thomson Consumer Electronics
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|---|---|
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Rohs Code
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No
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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THOMSON CONSUMER ELECTRONICS
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Configuration
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SINGLE
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Drain Current-Max (ID)
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16 A
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-609 Code
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e0
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Number of Elements
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1
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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125 W
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Surface Mount
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NO
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Terminal Finish
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Tin/Lead (Sn/Pb)
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Alternate Parts for IRF643
This table gives cross-reference parts and alternative options found for IRF643. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF643, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTP15N15 | Power Field-Effect Transistor, 15A I(D), 150V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF643 vs MTP15N15 |
| IRF643 | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF643 vs IRF643 |
| IRF643 | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF643 vs IRF643 |
| RFP15N12 | 15A, 120V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF643 vs RFP15N12 |
| IRF643 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF643 vs IRF643 |
| RFP10N12 | Power Field-Effect Transistor, 10A I(D), 120V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF643 vs RFP10N12 |
| IRF643 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF643 vs IRF643 |
| IRF643 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | IRF643 vs IRF643 |
| IRF643PBF | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Infineon Technologies AG | IRF643 vs IRF643PBF |
| RFP10N12 | 10A, 120V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF643 vs RFP10N12 |