Part Details for RFL1N15L by Harris Semiconductor
Overview of RFL1N15L by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for RFL1N15L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFL1N15L-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 166 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1621 In Stock |
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$1.8100 | Buy Now |
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Rochester Electronics | 1A, 150V, 1.9 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1621 |
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$1.5600 / $1.8300 | Buy Now |
Part Details for RFL1N15L
RFL1N15L CAD Models
RFL1N15L Part Data Attributes
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RFL1N15L
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFL1N15L
Harris Semiconductor
Small Signal Field-Effect Transistor, 1A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 1.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 35 pF | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 8.33 W | |
| Power Dissipation-Max (Abs) | 8.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |