Part Details for RFD8P06LESM by Intersil Corporation
Overview of RFD8P06LESM by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Part Details for RFD8P06LESM
RFD8P06LESM CAD Models
RFD8P06LESM Part Data Attributes:
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RFD8P06LESM
Intersil Corporation
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Datasheet
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RFD8P06LESM
Intersil Corporation
8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.33 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for RFD8P06LESM
This table gives cross-reference parts and alternative options found for RFD8P06LESM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD8P06LESM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD8P06LESM9A | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD8P06LESM vs RFD8P06LESM9A |
| RFD8P06LESM | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | RFD8P06LESM vs RFD8P06LESM |
| RFD8P06LESM9A | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD8P06LESM vs RFD8P06LESM9A |
| RFD8P06LESM | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD8P06LESM vs RFD8P06LESM |