RFD8P06LESM
vs
2SJ192
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERSIL CORP
SANYO ELECTRIC CO LTD
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
8 A
4 A
Drain-source On Resistance-Max
0.33 Ω
0.27 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
48 W
30 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
7
Package Description
IN-LINE, R-PSIP-T3
Pin Count
3
HTS Code
8541.29.00.95
Power Dissipation Ambient-Max
30 W
Pulsed Drain Current-Max (IDM)
16 A
Transistor Application
SWITCHING
Compare RFD8P06LESM with alternatives
Compare 2SJ192 with alternatives