Datasheets
RF1S640SM by:

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part Details for RF1S640SM by Intersil Corporation

Overview of RF1S640SM by Intersil Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for RF1S640SM

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RF1S640SM Part Data Attributes:

RF1S640SM Intersil Corporation
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RF1S640SM Intersil Corporation 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 580 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RF1S640SM

This table gives cross-reference parts and alternative options found for RF1S640SM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S640SM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RF1S640SM 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC RF1S640SM vs RF1S640SM
RF1S640SM9A 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation RF1S640SM vs RF1S640SM9A
RF1S640SM9A 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC RF1S640SM vs RF1S640SM9A
Part Number Description Manufacturer Compare
RFD16N06LESM 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RF1S640SM vs RFD16N06LESM
934055803118 47A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3 NXP Semiconductors RF1S640SM vs 934055803118
MTB60N05HDL 60A, 50V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC RF1S640SM vs MTB60N05HDL
IRFZ44ZSTRR Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier RF1S640SM vs IRFZ44ZSTRR
PSMN016-100PS 96A, 100V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors RF1S640SM vs PSMN016-100PS
IRLZ44ZS Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier RF1S640SM vs IRLZ44ZS
IRFZ44VZS Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier RF1S640SM vs IRFZ44VZS
RF1S640SM9A 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC RF1S640SM vs RF1S640SM9A
RF1S50N06LESM 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC RF1S640SM vs RF1S50N06LESM
RF1S640SM9A 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation RF1S640SM vs RF1S640SM9A

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