Part Details for RF1S50N06LESM9A by Intersil Corporation
Overview of RF1S50N06LESM9A by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
Part Details for RF1S50N06LESM9A
RF1S50N06LESM9A CAD Models
RF1S50N06LESM9A Part Data Attributes:
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RF1S50N06LESM9A
Intersil Corporation
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Datasheet
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RF1S50N06LESM9A
Intersil Corporation
50A, 80V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 145 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RF1S50N06LESM9A
This table gives cross-reference parts and alternative options found for RF1S50N06LESM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S50N06LESM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RF1S50N06LESM9A | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Harris Semiconductor | RF1S50N06LESM9A vs RF1S50N06LESM9A |
| RF1S50N06LESM9A | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | RF1S50N06LESM9A vs RF1S50N06LESM9A |