Part Details for RF1S40N10LESM by Intersil Corporation
Overview of RF1S40N10LESM by Intersil Corporation
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Applications
Energy and Power Systems
Renewable Energy
Part Details for RF1S40N10LESM
RF1S40N10LESM CAD Models
RF1S40N10LESM Part Data Attributes
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RF1S40N10LESM
Intersil Corporation
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Datasheet
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RF1S40N10LESM
Intersil Corporation
40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERSIL CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for RF1S40N10LESM
This table gives cross-reference parts and alternative options found for RF1S40N10LESM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S40N10LESM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RF1S40N10LESM9A | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | RF1S40N10LESM vs RF1S40N10LESM9A |
RF1S40N10LESM9A | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Harris Semiconductor | RF1S40N10LESM vs RF1S40N10LESM9A |
RF1S40N10LESM9A | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | RF1S40N10LESM vs RF1S40N10LESM9A |