RF1K4922196
Description: Power Field-Effect Transistor, 2.5A I(D), 60V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Overview of RF1K4922196 by Fairchild Semiconductor Corporation

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Part Data Attributes for RF1K4922196 by Fairchild Semiconductor Corporation

RF1K4922196
Fairchild Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
2.5 A
Drain-source On Resistance-Max
0.35 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. RF1K4922196
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 2.5A I(D), 60V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
    VS

Alternate Parts for RF1K4922196

This table gives cross-reference parts and alternative options found for RF1K4922196. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1K4922196, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RF1K49221 Power Field-Effect Transistor, 2.5A I(D), 60V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation RF1K4922196 vs RF1K49221
RF1K4922196 3.5A, 30V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation RF1K4922196 vs RF1K4922196
Part Number Description Manufacturer Compare
HAT2033R Power Field-Effect Transistor, 7A I(D), 60V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FP-8DA, SOP-8 Hitachi Ltd RF1K4922196 vs HAT2033R
RF1K4922196 3.5A, 30V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation RF1K4922196 vs RF1K4922196
HAT2033R 7A, 60V, 0.053ohm, N-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation RF1K4922196 vs HAT2033R
STS5NF60L N-Channel 60V - 0.045 Ohm - 5A - SO-8 STripFET MOSFET STMicroelectronics RF1K4922196 vs STS5NF60L
HAT2033RJ Power Field-Effect Transistor, 7A I(D), 60V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FP-8DA, SOP-8 Hitachi Ltd RF1K4922196 vs HAT2033RJ
UPA1728 9A, 60V, 0.034ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8 Renesas Electronics Corporation RF1K4922196 vs UPA1728
UPA1728 Power Field-Effect Transistor, 9A I(D), 60V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 NEC Electronics Group RF1K4922196 vs UPA1728
RF1K49221 Power Field-Effect Transistor, 2.5A I(D), 60V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation RF1K4922196 vs RF1K49221
HAT2033RJ 7A, 60V, 0.053ohm, N-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation RF1K4922196 vs HAT2033RJ

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