There are no models available for this part yet.
Overview of RF1K4915496 by Intersil Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for RF1K4915496 by Intersil Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | Min Qty: 3 | 2155 |
|
$0.4388 / $1.6875 | Buy Now | ||
Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1724 |
|
$0.5625 / $2.2500 | Buy Now |
CAD Models for RF1K4915496 by Intersil Corporation
Part Data Attributes for RF1K4915496 by Intersil Corporation
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
INTERSIL CORP
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Configuration
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
2 A
|
Drain-source On Resistance-Max
|
0.13 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
MS-012AA
|
JESD-30 Code
|
R-PDSO-G8
|
JESD-609 Code
|
e0
|
Number of Elements
|
2
|
Number of Terminals
|
8
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
2 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for RF1K4915496
This table gives cross-reference parts and alternative options found for RF1K4915496. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1K4915496, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDS9945X | 3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Texas Instruments | RF1K4915496 vs NDS9945X |
RF1K49154 | Power Field-Effect Transistor, 2A I(D), 60V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Fairchild Semiconductor Corporation | RF1K4915496 vs RF1K49154 |
NDS9955S62Z | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | RF1K4915496 vs NDS9955S62Z |
NDS9955L99Z | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | RF1K4915496 vs NDS9955L99Z |
NDS9955L86Z | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | RF1K4915496 vs NDS9955L86Z |
RF1K4915496 | Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Harris Semiconductor | RF1K4915496 vs RF1K4915496 |
IRF7103UTRPBF | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | RF1K4915496 vs IRF7103UTRPBF |
NDS9959 | Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | RF1K4915496 vs NDS9959 |
NDS9959_NL | Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | RF1K4915496 vs NDS9959_NL |
IRF7103TRPBF | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, | Infineon Technologies AG | RF1K4915496 vs IRF7103TRPBF |