Part Details for NDS9959 by Fairchild Semiconductor Corporation
Overview of NDS9959 by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Computing and Data Storage
Agriculture Technology
Price & Stock for NDS9959
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 476 |
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RFQ | ||
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Bristol Electronics | Min Qty: 9 | 455 |
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$0.2109 / $0.5625 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 364 |
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$0.2250 / $0.7500 | Buy Now |
Part Details for NDS9959
NDS9959 CAD Models
NDS9959 Part Data Attributes
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NDS9959
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
NDS9959
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOIC | |
| Package Description | SOIC-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NDS9959
This table gives cross-reference parts and alternative options found for NDS9959. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS9959, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRF7103Q | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | International Rectifier | NDS9959 vs AUIRF7103Q |
| NDS9957L99Z | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | NDS9959 vs NDS9957L99Z |
| RF1K49154 | Power Field-Effect Transistor, 2A I(D), 60V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Fairchild Semiconductor Corporation | NDS9959 vs RF1K49154 |
| MMDF1N05E | Power Field-Effect Transistor, 2A I(D), 50V, 0.5ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Motorola Semiconductor Products | NDS9959 vs MMDF1N05E |
| IRF7102 | Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | NDS9959 vs IRF7102 |
| BSO615NGXT | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOP-8 | Infineon Technologies AG | NDS9959 vs BSO615NGXT |
| RF1K4915496 | 2A, 60V, 0.13ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Intersil Corporation | NDS9959 vs RF1K4915496 |
| NDS9945X | 3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Texas Instruments | NDS9959 vs NDS9945X |
| MMDF1N05ER1 | Power Field-Effect Transistor, 1A I(D), 50V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 | Motorola Semiconductor Products | NDS9959 vs MMDF1N05ER1 |
| RF1K4915496 | Power Field-Effect Transistor, 2A I(D), 60V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Fairchild Semiconductor Corporation | NDS9959 vs RF1K4915496 |