Datasheets
NDS9959 by:

Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Part Details for NDS9959 by Fairchild Semiconductor Corporation

Overview of NDS9959 by Fairchild Semiconductor Corporation

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Applications Internet of Things (IoT) Computing and Data Storage Agriculture Technology

Price & Stock for NDS9959

Part # Distributor Description Stock Price Buy
Bristol Electronics   476
RFQ
Bristol Electronics   Min Qty: 9 455
  • 9 $0.5625
  • 37 $0.3656
  • 138 $0.2109
$0.2109 / $0.5625 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 364
  • 1 $0.7500
  • 34 $0.3750
  • 161 $0.2250
$0.2250 / $0.7500 Buy Now

Part Details for NDS9959

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NDS9959 Part Data Attributes

NDS9959 Fairchild Semiconductor Corporation
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NDS9959 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SOIC-8
Pin Count 8
Manufacturer Package Code 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDS9959

This table gives cross-reference parts and alternative options found for NDS9959. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS9959, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDS9959 2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC NDS9959 vs NDS9959
Part Number Description Manufacturer Compare
IRF7102TR Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier NDS9959 vs IRF7102TR
RF1K4915496 Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Harris Semiconductor NDS9959 vs RF1K4915496
IRF7103 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG NDS9959 vs IRF7103
NDS9959_NL Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9959 vs NDS9959_NL
BSO615NG 2.6A, 60V, 0.15ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8 Rochester Electronics LLC NDS9959 vs BSO615NG
NDS9957 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9959 vs NDS9957
MMDF1N05EG Power Field-Effect Transistor, 2A I(D), 50V, 0.5ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 Motorola Semiconductor Products NDS9959 vs MMDF1N05EG
MMDF1N05ER2 Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi NDS9959 vs MMDF1N05ER2
IRF7103TRPBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, Infineon Technologies AG NDS9959 vs IRF7103TRPBF
NDS9945X 3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Texas Instruments NDS9959 vs NDS9945X

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