Manufacturer | Description | Price Range | Set Alert | Details |
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Ericsson | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20237, 2 PIN |
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Advanced Semiconductor Inc | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-2 |
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