Part Details for PSMN7R6-60PS by NXP Semiconductors
Overview of PSMN7R6-60PS by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Security and Surveillance
Audio and Video Systems
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for PSMN7R6-60PS
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | MOSFET N-CH 60V 92A TO220AB | 7700 |
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RFQ |
Part Details for PSMN7R6-60PS
PSMN7R6-60PS CAD Models
PSMN7R6-60PS Part Data Attributes
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PSMN7R6-60PS
NXP Semiconductors
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Datasheet
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Compare Parts:
PSMN7R6-60PS
NXP Semiconductors
92A, 60V, 0.0078ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 110 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 92 A | |
Drain-source On Resistance-Max | 0.0078 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 389 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PSMN7R6-60PS
This table gives cross-reference parts and alternative options found for PSMN7R6-60PS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN7R6-60PS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | PSMN7R6-60PS vs IRFS620 |
SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | PSMN7R6-60PS vs SPP47N10 |
IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | PSMN7R6-60PS vs IXFH14N80 |
STP13NK50Z | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | PSMN7R6-60PS vs STP13NK50Z |
RFD14N06 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | PSMN7R6-60PS vs RFD14N06 |
SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | PSMN7R6-60PS vs SPP80N06S2L-06 |
STW20NM60FD | N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET | STMicroelectronics | PSMN7R6-60PS vs STW20NM60FD |
IXFH28N50Q | Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | PSMN7R6-60PS vs IXFH28N50Q |
IXFH26N50S | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247SMD, 3 PIN | IXYS Corporation | PSMN7R6-60PS vs IXFH26N50S |
IXTK33N50 | Power Field-Effect Transistor, 33A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | PSMN7R6-60PS vs IXTK33N50 |