Part Details for PSMN165-200K,518 by NXP Semiconductors
Overview of PSMN165-200K,518 by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for PSMN165-200K,518
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
PSMN165-200K,518
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Avnet Americas | PSMN165-200K - SMALL SIGNAL FIELD-EFFECT - Tape and Reel (Alt: PSMN165-200K,518) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 40 Partner Stock |
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RFQ | |
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Rochester Electronics | PSMN165-200K - Small Signal Field-Effect Transistor, 2.9A, 200V, N-Channel, MOSFET, MS-012AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 40 |
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$0.4157 / $0.4891 | Buy Now |
Part Details for PSMN165-200K,518
PSMN165-200K,518 CAD Models
PSMN165-200K,518 Part Data Attributes
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PSMN165-200K,518
NXP Semiconductors
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Datasheet
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PSMN165-200K,518
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET SOIC 8-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SOIC | |
Package Description | PLASTIC, SO-8 | |
Pin Count | 8 | |
Manufacturer Package Code | SOT96-1 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Factory Lead Time | 4 Weeks | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 2.9 A | |
Drain-source On Resistance-Max | 0.165 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |