There are no models available for this part yet.
Overview of PSMN057-200B,118 by NXP Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 5 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| AD9520-0BCPZ | Analog Devices | Clock IC with 2.8GHz on-chip V | |
| ADUM2200BRWZ-RL | Analog Devices | DUAL-CHANNEL DIGITAL ISOLATORS | |
| ADUM3200BRZ-RL7 | Analog Devices | pb Free DUAL-CHANNEL DIGITAL I |
CAD Models for PSMN057-200B,118 by NXP Semiconductors
Part Data Attributes for PSMN057-200B,118 by NXP Semiconductors
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
NXP SEMICONDUCTORS
|
|
Part Package Code
|
D2PAK
|
|
Package Description
|
PLASTIC, D2PAK-3
|
|
Pin Count
|
3
|
|
Manufacturer Package Code
|
SOT404
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.75
|
|
Avalanche Energy Rating (Eas)
|
300 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
200 V
|
|
Drain Current-Max (ID)
|
39 A
|
|
Drain-source On Resistance-Max
|
0.057 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
245
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
250 W
|
|
Pulsed Drain Current-Max (IDM)
|
156 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for PSMN057-200B,118
This table gives cross-reference parts and alternative options found for PSMN057-200B,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN057-200B,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PSMN057-200B,118 | N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin | Nexperia | PSMN057-200B,118 vs PSMN057-200B,118 |
| PSMN057-200B/T3 | TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PSMN057-200B,118 vs PSMN057-200B/T3 |
| PSMN057-200B | Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | PSMN057-200B,118 vs PSMN057-200B |
| 934056599118 | Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | PSMN057-200B,118 vs 934056599118 |
| PSMN057-200B | TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PSMN057-200B,118 vs PSMN057-200B |