934056599118
Description: Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Overview of 934056599118 by Nexperia

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Space Technology Aerospace and Defense Energy and Power Systems

CAD Models for 934056599118 by Nexperia
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Part Data Attributes for 934056599118 by Nexperia

934056599118
Nexperia
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
NEXPERIA
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
300 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
39 A
Drain-source On Resistance-Max
0.057 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
156 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. 934056599118
    Nexperia
    Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    VS

Alternate Parts for 934056599118

This table gives cross-reference parts and alternative options found for 934056599118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934056599118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
934056599118 TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power NXP Semiconductors 934056599118 vs 934056599118
PSMN057-200B TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors 934056599118 vs PSMN057-200B
PSMN057-200B Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia 934056599118 vs PSMN057-200B
PSMN057-200B,118 N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin Nexperia 934056599118 vs PSMN057-200B,118
Part Number Description Manufacturer Compare
PSMN057-200B TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors 934056599118 vs PSMN057-200B
934056599118 TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power NXP Semiconductors 934056599118 vs 934056599118
PSMN057-200B,118 N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin Nexperia 934056599118 vs PSMN057-200B,118
PSMN057-200B Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia 934056599118 vs PSMN057-200B

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