Part Details for PMN35EN,115 by NXP Semiconductors
Overview of PMN35EN,115 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Price & Stock for PMN35EN,115
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | PMN35EN - Small Signal Field-Effect Transistor, 5.1A, 30V, N-Channel MOSFET, SC-74 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 9612 |
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$0.0581 / $0.0683 | Buy Now |
Part Details for PMN35EN,115
PMN35EN,115 CAD Models
PMN35EN,115 Part Data Attributes
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PMN35EN,115
NXP Semiconductors
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Datasheet
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PMN35EN,115
NXP Semiconductors
PMN35EN - 30 V, 5.1 A N-channel Trench MOSFET TSOP 6-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TSOP | |
Package Description | PLASTIC, SC-74, TSOP-6 | |
Pin Count | 6 | |
Manufacturer Package Code | SOT457 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | NXP | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5.1 A | |
Drain-source On Resistance-Max | 0.031 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |